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| BUK9225-55A TrenchMOSTM logic level FET Rev. 01 -- 17 April 2001 M3D300 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM1 technology, featuring very low on-state resistance. Product availability: BUK9225-55A in SOT428 (D-PAK). 2. Features s s s s TrenchMOSTM technology Q101 compliant 175 C rated Logic level compatible. 3. Applications s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids. c c 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Description gate (g) mb d Simplified outline Symbol drain (d) source (s) mounting base; connected to drain (d) g s MBB076 2 1 Top view 3 MBK091 SOT428 (D-PAK) 1. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors BUK9225-55A TrenchMOSTM logic level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 C; VGS = 5 V Tmb = 25 C Tj = 25 C; VGS = 5 V; ID = 25 A Tj = 25 C; VGS = 4.5 V; ID = 25 A Tj = 25 C; VGS = 10 V; ID = 25 A Typ - - - - 21 - 19 Max 55 43 94 175 25 27 22 Unit V A W C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter m m m 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS = 5 V; Figure 2 and 3 Tmb = 100 C; VGS = 5 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM WDSS peak drain current total power dissipation storage temperature operating junction temperature reverse drain current (DC) pulsed reverse drain current non-repetitive avalanche energy Tmb = 25 C Tmb = 25 C; pulsed; tp 10 s unclamped inductive load; ID = 43 A; VDS 55 V; VGS = 5 V; RGS = 50 ; starting Tj = 25 C Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1 [1] Conditions RGS = 20 k Min - - - - - - - -55 -55 - - - Max 55 55 15 43 30 173 94 +175 +175 43 173 123 Unit V V V A A A W C C A A mJ Source-drain diode Avalanche ruggedness [1] IDM is limited by chip, not package. 9397 750 08134 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 01 -- 17 April 2001 2 of 13 Philips Semiconductors BUK9225-55A TrenchMOSTM logic level FET 03aa24 120 120 Pder (%) 100 03aa16 Ider (%) 100 80 80 60 60 40 40 20 20 0 0 0 50 100 150 200 o Tmb ( C) 0 25 50 75 100 125 150 175 200 Tmb (oC) P tot P der = ---------------------- x 100% P tot ( 25 C ) VGS 4.5 V ID I der = ------------------ x 100% I D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature. 103 03ne70 ID (A) RDSon = VDS / ID tp = 10 us 102 100 us 10 P = tp T 1 ms D.C. 10 ms tp T t 100 ms 102 VDS (V) 1 1 10 Tmb = 25 C; IDM is single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 08134 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 01 -- 17 April 2001 3 of 13 Philips Semiconductors BUK9225-55A TrenchMOSTM logic level FET 7. Thermal characteristics Table 4: Symbol Rth(j-a) Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to mounting Figure 4 base Conditions Value 71.4 1.6 Unit K/W K/W 7.1 Transient thermal impedance 10 Zth(j-mb) (K/W) 03ne71 1 = 0.5 0.2 0.1 10-1 0.05 P = tp T 0.02 Single Shot 10-2 10-6 10-5 10-4 10-3 10-2 10-1 tp T t tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 08134 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 01 -- 17 April 2001 4 of 13 Philips Semiconductors BUK9225-55A TrenchMOSTM logic level FET 8. Characteristics Table 5: Characteristics Tj = 25 C unless otherwise specified Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 0.25 mA; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain-source leakage current VDS = 55 V; VGS = 0 V Tj = 25 C Tj = 175 C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = 10 V; VDS = 0 V VGS = 5 V; ID = 25 A; Figure 7 and 8 Tj = 25 C Tj = 175 C VGS = 4.5 V; ID = 25 A; VGS = 10 V; ID =25 A; Dynamic characteristics Ciss Coss Crss td(on) tr td(off) tf Ld Ls input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance measured from drain to centre of die measured from source lead to source bond pad VDD = 30 V; RL = 1.2 ; VGS = 5 V; RG = 10 ; VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 - - - - - - - - - 1360 240 160 17 104 82 80 2.5 7.5 1724 287 222 - - - - - - pF pF pF ns ns ns ns nH nH - - - - 21 - - 19 25 50 27 22 m m m m - - - 0.05 - 2 10 500 100 A A nA 1 0.5 - 1.5 - - 2 - 2.3 V V V 55 50 - - - - V V Min Typ Max Unit Static characteristics 9397 750 08134 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 01 -- 17 April 2001 5 of 13 Philips Semiconductors BUK9225-55A TrenchMOSTM logic level FET Table 5: Characteristics...continued Tj = 25 C unless otherwise specified Symbol VSD trr Qr Parameter source-drain (diode forward) voltage reverse recovery time recovered charge Conditions IS = 15 A; VGS = 0 V; Figure 15 IS = 20 A; dIS/dt = -100 A/s VGS = -10 V; VDS = 30 V Min - - - Typ 0.85 50 85 Max 1.2 - - Unit V ns nC Source-drain diode ID (A) 180 160 140 120 VGS (V) = 9 8 03na05 10 7 6 RDSon (m) 45 40 35 03na03 5 100 80 60 20 40 20 0 0 2 4 6 8 2.2 10 10 VDS (V) 2 4 6 8 VGS (V) 10 3 15 4 30 25 Tj = 25 C Tj = 25 C; ID = 25 A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values. RDSon 50 (m) 45 40 35 30 VGS (V)= 3 03na06 2.2 a 2 1.8 1.6 1.4 1.2 03ne89 3.2 3.4 3.6 3.8 4 25 5 20 15 1 0.8 0.6 0.4 0.2 10 10 30 50 70 ID (A) 90 0 -60 -20 20 60 100 140 180 Tj (oC) Tj = 25 C R DSon a = --------------------------R DSon ( 25 C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. 9397 750 08134 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 01 -- 17 April 2001 6 of 13 Philips Semiconductors BUK9225-55A TrenchMOSTM logic level FET 2.5 VGS(th) (V) 2 03aa33 10-1 ID (A) 10-2 03aa36 1.5 10-3 min 10-4 typ max 1 0.5 10-5 0 -60 0 60 120 Tj ( C) o 10-6 180 0 0.5 1 1.5 2 2.5 3 VGS (V) ID = 1 mA; VDS = VGS Tj = 25 C; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. 40 35 30 25 20 15 10 5 0 0 20 40 60 ID (A) 80 03na04 Fig 10. Sub-threshold drain current as a function of gate-source voltage. C 4000 (pF) 3500 3000 2500 2000 1500 1000 500 0 Coss Crss 03na09 gfs (S) Ciss 10-2 10-1 1 10 102 VDS (V) Tj = 25 C; VDS = 25 V VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 9397 750 08134 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 01 -- 17 April 2001 7 of 13 Philips Semiconductors BUK9225-55A TrenchMOSTM logic level FET 100 ID (A) 80 03na00 6 VGS (V) 5 03na02 4 60 3 VDD= 14 V VDD = 44 V 40 2 20 Tj = 175 oC 0 0 2 4 VGS (V) 6 Tj = 25 oC 1 0 0 10 20 30 QG (nC) 40 VDS = 25 V Tj = 25 C; ID = 25 A Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 100 IS (A) 80 Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values. 03na01 60 Tj = 175 oC 40 Tj = 25 oC 20 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD (V) VGS = 0 V Fig 15. Reverse diode current as a function of reverse diode voltage; typical values. 9397 750 08134 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 01 -- 17 April 2001 8 of 13 Philips Semiconductors BUK9225-55A TrenchMOSTM logic level FET 9. Package outline Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped) SOT428 seating plane y A E b2 A A1 mounting base A2 D1 E1 D HE L2 2 L L1 1 b1 e e1 b 3 wM A c 0 10 scale 20 mm DIMENSIONS (mm are the original dimensions) A UNIT max. mm 2.38 2.22 A1(1) 0.65 0.45 A2 0.89 0.71 b 0.89 0.71 b1 max. 1.1 0.9 b2 5.36 5.26 c 0.4 0.2 D1 E D max. max. max. 6.22 5.98 4.81 4.45 6.73 6.47 E1 min. 4.0 e e1 HE max. 10.4 9.6 L 2.95 2.55 L1 min. 0.5 L2 0.7 0.5 w 0.2 y max. 0.2 2.285 4.57 Note 1. Measured from heatsink back to lead. OUTLINE VERSION SOT428 REFERENCES IEC JEDEC TO-252 EIAJ SC-63 EUROPEAN PROJECTION ISSUE DATE 98-04-07 99-09-13 Fig 16. SOT428 (D-PAK). 9397 750 08134 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 01 -- 17 April 2001 9 of 13 Philips Semiconductors BUK9225-55A TrenchMOSTM logic level FET 10. Revision history Table 6: 01 Revision history CPCN Description Product specification; initial version. Rev Date 20010417 9397 750 08134 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 01 -- 17 April 2001 10 of 13 Philips Semiconductors BUK9225-55A TrenchMOSTM logic level FET 11. Data sheet status Data sheet status [1] Objective data Preliminary data Product status [2] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Product data Production [1] [2] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 12. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 9397 750 08134 (c) Philips Electronics N.V. 2001 All rights reserved. Product specification Rev. 01 -- 17 April 2001 11 of 13 Philips Semiconductors BUK9225-55A TrenchMOSTM logic level FET Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102 Canada: Tel. +1 800 234 7381 China/Hong Kong: Tel. +852 2 319 7888, Fax. +852 2 319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Tel. +45 3 288 2636, Fax. +45 3 157 0044 Finland: Tel. +358 961 5800, Fax. +358 96 158 0920 France: Tel. +33 1 4728 6600, Fax. +33 1 4728 6638 Germany: Tel. +49 40 23 5360, Fax. +49 402 353 6300 Hungary: Tel. +36 1 382 1700, Fax. +36 1 382 1800 India: Tel. +91 22 493 8541, Fax. +91 22 493 8722 Indonesia: see Singapore Ireland: Tel. +353 17 64 0000, Fax. +353 17 64 0200 Israel: Tel. +972 36 45 0444, Fax. +972 36 49 1007 Italy: Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Tel. +81 33 740 5130, Fax. +81 3 3740 5057 Korea: Tel. +82 27 09 1412, Fax. +82 27 09 1415 Malaysia: Tel. +60 37 50 5214, Fax. +60 37 57 4880 Mexico: Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Tel. +31 40 278 2785, Fax. +31 40 278 8399 New Zealand: Tel. +64 98 49 4160, Fax. +64 98 49 7811 Norway: Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Tel. +63 28 16 6380, Fax. +63 28 17 3474 Poland: Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Tel. +34 33 01 6312, Fax. +34 33 01 4107 Sweden: Tel. +46 86 32 2000, Fax. +46 86 32 2745 Switzerland: Tel. +41 14 88 2686, Fax. +41 14 81 7730 Taiwan: Tel. +886 22 134 2451, Fax. +886 22 134 2874 Thailand: Tel. +66 23 61 7910, Fax. +66 23 98 3447 Turkey: Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 272 4825 Internet: http://www.semiconductors.philips.com (SCA72) 9397 750 08134 (c) Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 01 -- 17 April 2001 12 of 13 Philips Semiconductors BUK9225-55A TrenchMOSTM logic level FET Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 (c) Philips Electronics N.V. 2001. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 17 April 2001 Document order number: 9397 750 08134 |
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